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参数资料
| 型号： | MMBF170LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 500MA SOT-23 |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 Wire Change for SOT23 Pkg 26/May/2009 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | MMBF170LT1OSDKR |
MMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage (V GS = 0, I D = 100 m A)
Gate ? Body Leakage Current, Forward (V GSF = 15 Vdc, V DS = 0)
V (BR)DSS
I GSS
60
?
?
10
Vdc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V DS = V GS , I D = 1.0 mA)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 200 mA)
On ? State Drain Current (V DS = 25 Vdc, V GS = 0)
V GS(th)
r DS(on)
I D(off)
0.8
?
?
3.0
5.0
0.5
Vdc
W
m A
DYNAMIC CHARACTERISTICS
Input Capacitance
(V DS = 10 Vdc, V GS = 0 V, f = 1.0 MHz)
C iss
?
60
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 25 Vdc, I D = 500 mA, R gen = 50 W )
Figure 1
t d(on)
t d(off)
?
?
10
10
ns
1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
ORDERING INFORMATION
MMBF170LT1G
MMBF170LT3G
NVBF170LT1G*
Device
Package
SOT ? 23 (TO ? 236)
(Pb ? Free)
SOT ? 23 (TO ? 236)
(Pb ? Free)
SOT ? 23 (TO ? 236)
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC ? Q101 Qualified and PPAP
Capable.
+25 V
t on
t off
t d(on)
t r
t d(off)
t f
125 W
TO SAMPLING
OUTPUT
90%
90%
PULSE
GENERATOR
50 W
V in
40 pF
20 dB 50 W
ATTENUATOR
SCOPE
50 W INPUT
V out
INVERTED
V out
INPUT
10%
90%
50%
50%
50 W
1 M W
V in
10%
PULSE WIDTH
(V in AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
http://onsemi.com
2
Figure 2. Switching Waveform
相关PDF资料 |
PDF描述 |
|---|---|
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| MMBF2202PT1 | MOSFET P-CH 20V 300MA SOT-323 |
| MMDF1N05ER2G | MOSFET N-CHAN DUAL 2A 50V 8SOIC |
| MMDF2C03HDR2G | MOSFET N/P-CHAN 2A 30V 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170LT1_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 500 mA, 60 V N-Channel SOT-23 |
| MMBF170LT1G | 功能描述:MOSFET 60V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170LT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMBF170LT3 | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF170LT3G | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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