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参数资料
| 型号： | MMBZ12VAL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封装： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件页数： | 11/15页 |
| 文件大小： | 78K |
| 代理商： | MMBZ12VAL/DG |
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
5 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Measured from pin 1 or 2 to pin 3.
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 8 kV
Fig 1.
10/1000
s pulse waveform according to
IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
tp (ms)
0
4.0
3.0
1.0
2.0
006aab319
50
100
150
IPP
(%)
0
50 % IPP; 1000 s
100 % IPP; 10 s
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] -
-
460
K/W
[2] -
-
340
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
[3] --50
K/W
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