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| 型号： | MMBZ12VAL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封装： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件页数： | 2/15页 |
| 文件大小： | 78K |
| 代理商： | MMBZ12VAL/DG |
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
10 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9.
Test information
9.1 Quality information
This product has been qualied in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualication for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
Fig 10. Package outline SOT23 (TO-236AB)
04-11-04
Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
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相关代理商/技术参数 |
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| MMBZ12VALT1 | 功能描述:TVS二极管阵列 12V Dual Zener RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT1G | 功能描述:TVS二极管阵列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VALT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
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