参数资料
型号: MMBZ12VAL/DG
厂商: NXP SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: TVS DIODE, TO-236AB
封装: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件页数: 3/15页
文件大小: 78K
代理商: MMBZ12VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
11 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
11. Packing information
[1]
For further information and the availability of packing methods, see Section 15.
Table 11.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
MMBZ12VAL
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ12VAL/DG
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
MMBZ15VAL/DG
MMBZ18VAL/DG
MMBZ20VAL/DG
MMBZ27VAL/DG
MMBZ33VAL/DG
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MMBZ12VALT1 功能描述:TVS二极管阵列 12V Dual Zener RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ12VALT1G 功能描述:TVS二极管阵列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
MMBZ12VALT3 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
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MMBZ12VDG 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression