参数资料
型号: MMBZ12VAL/DG
厂商: NXP SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: TVS DIODE, TO-236AB
封装: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件页数: 15/15页
文件大小: 78K
代理商: MMBZ12VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
9 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
8.
Application information
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000
s waveform.
Fig 7.
V-I characteristics for a unidirectional
ESD protection diode
Fig 8.
V-I characteristics for a bidirectional
ESD protection diode
006aab324
VCL VBR VRWM
IRM
IR
IPP
V
I
P-N
+
IPPM
006aab325
VCL VBR VRWM
VCL
VBR
VRWM
IRM
IR
IPP
+
IPPM
Fig 9.
Typical application: ESD and transient voltage protection of data lines
006aab326
MMBZxVAL
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
GND
MMBZxVAL
line 1 to be protected
GND
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