- 您现在的位置：买卖IC网 > PDF目录45334 > MMBZ12VAL/DG (NXP SEMICONDUCTORS) TVS DIODE, TO-236AB PDF资料下载
参数资料
| 型号： | MMBZ12VAL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封装： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件页数： | 14/15页 |
| 文件大小： | 78K |
| 代理商： | MMBZ12VAL/DG |
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
8 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
MMBZ27VAL: unidirectional and bidirectional
Tamb =25 °C
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
f = 1 MHz; Tamb =25 °C
(1) MMBZ15VAL: unidirectional
(2) MMBZ15VAL: bidirectional
(3) MMBZ27VAL: unidirectional
(4) MMBZ27VAL: bidirectional
MMBZ27VAL: VRWM =22V
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Reverse leakage current as a function of
ambient temperature; typical values
006aab320
102
10
103
PPPM
(W)
1
tp (ms)
102
103
102
101
10
1
Tj (°C)
0
200
150
50
100
006aab321
0.4
0.8
1.2
PPPM
0
PPPM(25°C)
VR (V)
025
20
10
15
5
006aab322
40
60
20
80
100
Cd
(pF)
0
(1)
(2)
(3)
(4)
006aab323
101
102
10
1
102
IRM
(nA)
103
Tamb (°C)
75
175
125
25
75
25
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ5221BW | 2.4 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5225BW | 3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5228BW | 3.9 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5234BW | 6.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5237BW | 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VALT1 | 功能描述:TVS二极管阵列 12V Dual Zener RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT1G | 功能描述:TVS二极管阵列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VALT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
发布紧急采购，3分钟左右您将得到回复。