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参数资料
| 型号： | MMDF2N05ZR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 代理商： | MMDF2N05ZR2 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MMDF2N05ZR2/D
MMDF2N05ZR2
Preferred Device
Power MOSFET
2 Amps, 50 Volts
NChannel SO8, Dual
EZFETs
t are an advanced series of power MOSFETs which
contain monolithic backtoback zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. EZFET devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
50
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
50
Vdc
GatetoSource Voltage Continuous
VGS
± 15
Vdc
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 70°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
2.0
1.7
8.0
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Thermal Resistance Junction to Ambient
RθJA
62.5
°C/W
Maximum Temperature for Soldering
Purposes
TL
260
°C
1. When mounted on G10/FR4 glass epoxy board using minimum
recommended footprint.
Source1
1
2
3
4
8
7
6
5
Top View
Gate1
Source2
Gate2
Drain1
Drain2
2 AMPERES
50 VOLTS
RDS(on) = 300 mW
D
S
G
1
8
Device
Package
Shipping
ORDERING INFORMATION
MMDF2N05ZR2
SO8
2500 Tape & Reel
SO8, Dual
CASE 751
STYLE 11
http://onsemi.com
NChannel
LYWW
MARKING
DIAGRAM
F2N05Z
= Device Code
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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