- 您现在的位置：买卖IC网 > PDF目录182955 > MMDF2N05ZR2 (ON SEMICONDUCTOR) 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MMDF2N05ZR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 代理商： | MMDF2N05ZR2 |
MMDF2N05ZR2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
50
56
55
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 55°C)
IDSS
2.0
25
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0)
IGSS
0.14
0.5
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
5.0
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.6 Adc)
RDS(on)
200
350
300
500
mΩ
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
gFS
2.0
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
104
pF
Output Capacitance
Coss
58
Transfer Capacitance
Crss
16
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 0.6 Adc,
VGS = 10 Vdc,
RG = 25 Ω)
td(on)
24
48
ns
Rise Time
tr
46
92
TurnOff Delay Time
td(off)
130
260
Fall Time
tf
71
142
Gate Charge
(see figure 8)
(VDS = 25 Vdc, ID = 1.3 Adc,
VGS = 10 Vdc)
QT
3.3
4.6
nC
Q1
0.7
Q2
1.3
Q3
1.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
0.82
1.4
Vdc
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
66
ns
ta
23
tb
43
Reverse Recovery Storage Charge
QRR
0.08
μC
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF2N06VLR2 | 2500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF3N06HDR2 | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF4N01HDR2 | 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| MMDF6N02HDR2 | 6500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDJ3N03BJTR2G | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2N06V | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
| MMDF2N06VL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
| MMDF2P01HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2P01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF2P02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
发布紧急采购，3分钟左右您将得到回复。