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参数资料
| 型号： | MMDF2N05ZR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 751-07, SOP-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 代理商： | MMDF2N05ZR2 |
MMDF2N05ZR2
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2
0
0.5
1.5
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.8
1.0
1.2
0.05
Figure 3. OnResistance versus
GatetoSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1
100
Figure 5. OnResistance Variation
with Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = 25°C
TJ = 55°C
25
°C
100
°C
0.6
2
1
0.2
TJ = 25°C
1
2
3
2.5
0.5
5
2.5
3
3.5
4
0.4
0.65
0
0.5
1
2.5
3
10
0
5
10
15
30
3.9 V
20
25
0
0.25
0.45
1.5
5
5.5
6
6.5
8
7
7.5
9
10
VGS, GATETOSOURCE VOLTAGE (VOLTS)
1.5
2
10 V
VGS = 5.0 V
TJ = 25°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1 A
125
75
25
VGS = 0 V
TJ = 125°C
100
°C
0.2
0.6
1.8
1.4
1
2.5
3
4.3 V
5.0 V
5.5 V
6.0 V
6.5 V
7 V
VGS = 10 V
ID = 1.5 A
TJ = 25°C
3.5
4
3.5
4
4.5
5.5
6
6.5
8.5
9.5
3.5
4
0.1
0.01
35
40
45
50
25
°C
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