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参数资料
| 型号： | MMDF3N06HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 213K |
| 代理商： | MMDF3N06HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
ID
IDM
3.3
16.5
Adc
Apk
Source Current — Continuous @ TA = 25°C
IS
1.7
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25 )
EAS
105
mJ
Thermal Resistance — Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF3N06HDR2
13
″
12 mm embossed tape
2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
Motorola, Inc. 1997
MMDF3N06HD
DUAL TMOS
POWER MOSFET
60 VOLTS
RDS(on) = 100 mW
CASE 751–05, Style 11
SO–8
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
Motorola Preferred Device
D
S
G
Preferred devices are Motorola recommended choices for future use and best overall value.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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