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参数资料
| 型号： | MMDF3N06HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 10/10页 |
| 文件大小： | 213K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
9
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 751–05
SO–8
ISSUE P
STYLE 11:
PIN 1.
SOURCE 1
2.
GATE 1
3.
SOURCE 2
4.
GATE 2
5.
DRAIN 2
6.
DRAIN 2
7.
DRAIN 1
8.
DRAIN 1
SEATING
PLANE
1
4
5
8
C
K
4X
P
A
0.25 (0.010) M TB SS
0.25
(0.010)
M
B
M
8X
D
R
M
J
X
45
_
F
–A–
–B–
–T–
DIM
MIN
MAX
MILLIMETERS
A
4.80
5.00
B
3.80
4.00
C
1.35
1.75
D
0.35
0.49
F
0.40
1.25
G
1.27 BSC
J
0.18
0.25
K
0.10
0.25
M
0
7
P
5.80
6.20
R
0.25
0.50
_
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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