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参数资料
| 型号： | MMDF3N06HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 7/10页 |
| 文件大小： | 213K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
6
Motorola TMOS Power MOSFET Transistor Device Data
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
0
25
45
65
85
105
60
ID = 3.0 A
80
145
120
40
20
100
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 12 V
SINGLE PULSE
TA = 25°C
10
0.1
dc
10 ms
1.0
100
1.0 ms
125
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.1
0.01
D = 0.5
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1.0
10
0.02
100
1000
0.001
1.0
0.0106
0.0431
0.1643
0.3507
0.4302
177.14 F
2.9468 F
0.5064 F
0.1406 F
0.0253 F
Chip
Junction
Ambient
0.01
0.05
0.1
0.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF4C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
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