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参数资料
| 型号： | MMDF3N06HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 213K |
| 代理商： | MMDF3N06HDR2 |
MMDF3N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.4
0.8
1.2
1.6
2.0
0
1.0
3.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.2
0.25
0.3
0.06
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
1000
Figure 5. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
100
°C
0.15
4.0
2.0
0.05
TJ = 25°C
2.0
4.0
6.0
5.0
1.0
1.5
2.0
2.5
3.0
3.5
0.1
0.09
1.0
1.5
2.0
3.5
5.0
10
0
5.0
10
15
30
2.3 V
20
25
0
0.07
0.085
3.0
2.0
3.0
4.0
5.0
8.0
6.0
7.0
9.0
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2.5
3.0
10 V
VGS = 4.5 V
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.2
1.0
1.2
1.8
VGS = 10 V
ID = 1.5 A
125
75
25
–25
VGS = 0 V
TJ = 125°C
0.2
0.6
1.8
1.4
1.0
5.0
6.0
4.5 V
4.3 V
4.1 V
VGS = 10 V
ID = 3.0 A
TJ = 25°C
1.75
2.75
2.25
3.25
0.065
0.075
0.08
4.5
4.0
0.4
0.6
0.8
1.4
1.6
1.0
100
25
°C
2.1 V
2.5 V
2.7 V
2.9 V
3.1 V
6.0 V
3.3 V
3.5 V
3.7 V
3.9 V
25
°C
100
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
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