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参数资料
| 型号： | MMDF3N04HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 291K |
| 代理商： | MMDF3N04HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. MiniMOS devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
Avalanche Energy Specified
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
40
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
40
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (4)
ID
IDM
3.4
3.0
40
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor (1)
PD
2.0
16
Watts
mW/
°C
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor (2)
PD
1.39
11.11
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)
EAS
162
mJ
THERMAL RESISTANCE
Rating
Symbol
Typ.
Max.
Unit
Thermal Resistance — Junction to Ambient, PCB Mount (1)
— Junction to Ambient, PCB Mount (2)
R
θJA
R
θJA
—
62.5
90
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
ORDERING INFORMATION
D3N04H
Device
Reel Size
Tape Width
Quantity
D3N04H
MMDF3N04HDR2
13
″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS, MiniMOS, and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Micro–8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N04HD/D
Motorola, Inc. 1996
MMDF3N04HD
DUAL TMOS
POWER MOSFET
3.4 AMPERES
40 VOLTS
RDS(on) = 0.080 OHM
Motorola Preferred Device
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
CASE 751–05, Style 14
SO–8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
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