参数资料
型号: MMDF3N04HDR2
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 4/10页
文件大小: 291K
代理商: MMDF3N04HDR2
MMDF3N04HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
1.2
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
Figure 3. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation
with Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = 25°C
TJ = –55°C
25
°C
100
°C
4
2
TJ = 25°C
2
4
6
5
1
2
2.5
3
3.5
4
0.08
0
1
2
5
6
3.1 V
0.06
0.07
3
4
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 3.4 A
125
75
25
– 25
1
5
6
2.9 V
3.3 V
3.5 V
3.7 V
4.1 V
4.5 V
VGS =
10 V
4.3 V
1.5
4.5
0.055
0.065
0.075
I DSS
,LEAKAGE
(nA)
1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
0
5
10
15
30
20
25
VGS = 0 V
TJ = 125°C
100
°C
0.1
35
40
25
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 3.4 A
TJ = 25°C
0.4
1.4
0.6
1.6
0.8
1.8
3.9 V
2.7 V
0.085
0.09
0.095
0.1
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