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参数资料
| 型号： | MMDF3N04HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 291K |
| 代理商： | MMDF3N04HDR2 |
MMDF3N04HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
40
—
4.3
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
0.015
0.15
2.5
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
0.013
500
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
2.0
4.9
3.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 10 Vdc, ID = 3.4 Adc)
(VGS = 4.5 Vdc, ID = 1.7 Adc)
RDS(on)
—
55
79
80
100
m
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.7 Adc)
(1)
gFS
2.0
4.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
450
900
pF
Output Capacitance
(VDS = 32 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
130
230
Transfer Capacitance
f = 1.0 MHz)
Crss
—
32
96
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 ) (1)
td(on)
—
9.0
18
ns
Rise Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 ) (1)
tr
—
15
30
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc, RG = 6 ) (1)
td(off)
—
28
56
Fall Time
tf
—
19
38
Turn–On Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 ) (1)
td(on)
—
13
26
ns
Rise Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 ) (1)
tr
—
77
144
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc, RG = 6 ) (1)
td(off)
—
17
34
Fall Time
tf
—
20
40
Gate Charge
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
QT
—
13.9
28
nC
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
Q1
—
2.1
—
(VDS = 40 Vdc, ID = 3.4 Adc,
VGS = 10 Vdc) (1)
Q2
—
3.7
—
Q3
—
5.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.4 Adc, VGS = 0 Vdc) (1)
(IS = 3.4 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.87
0.8
1.5
—
Vdc
Reverse Recovery Time
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
trr
—
27
—
ns
(IS = 3.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
ta
—
20
—
dIS/dt = 100 A/s) (1)
tb
—
7.0
—
Reverse Recovery Storage Charge
QRR
—
0.03
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
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