- 您现在的位置：买卖IC网 > PDF目录95978 > MMDF6N02HDR2 (ON SEMICONDUCTOR) 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MMDF6N02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SOP-8 |
| 文件页数： | 1/10页 |
| 文件大小： | 227K |
| 代理商： | MMDF6N02HDR2 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MMDF6N02HD/D
MMDF6N02HD
Preferred Device
Power MOSFET
6 Amps, 20 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature low RDS(on) and
true logic level performance. Dual MOSFET devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
20
Vdc
GatetoSource Voltage Continuous
VGS
± 12
Vdc
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 70°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
6.5
6.0
52
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Thermal Resistance Junction to Ambient
RθJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes
TL
260
°C
1. Mounted on 1″ square FR4 or G10 board (VGS = 4.5 V, @ 10 seconds).
Source1
1
2
3
4
8
7
6
5
Top View
Gate1
Source2
Gate2
Drain1
Drain2
1
8
6 AMPERES
20 VOLTS
RDS(on) = 35 mW
Device
Package
Shipping
ORDERING INFORMATION
MMDF6N02HDR2
SO8
2500 Tape & Reel
SO8, Dual
CASE 751
STYLE 11
http://onsemi.com
NChannel
LYWW
MARKING
DIAGRAM
D6N02H
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
D
S
G
相关PDF资料 |
PDF描述 |
|---|---|
| MMDF6N03HDR2 | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDF7N02ZR2 | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MMDJ3N03BJTR2 | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MMDJ3N03BJT | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MMDJ3P03BJTR2 | 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
| MMDF7N02ZR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 7A 8-Pin SOIC N T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMDFS2P102 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:P-Channel Power MOSFET with Schottky Rectifier 20 Volts |
发布紧急采购，3分钟左右您将得到回复。