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| 型号： | MMDF6N02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 751-07, SOP-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 227K |
| 代理商： | MMDF6N02HDR2 |
MMDF6N02HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
24.3
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
2.5
25
μAdc
GateBody Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
0.3
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
0.8
2.86
1.2
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
RDS(on)
28
42
35
49
mΩ
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
8.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
515
572
pF
Output Capacitance
Coss
345
372
Transfer Capacitance
Crss
150
178
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS = 4.0 Vdc,
RG = 10 Ω)
td(on)
12
15
ns
Rise Time
tr
96
103
TurnOff Delay Time
td(off)
100
108
Fall Time
tf
130
140
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
VGS = 4.0 Vdc)
QT
11
12
nC
Q1
1.2
Q2
6.1
Q3
3.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.84
0.77
1.2
Vdc
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
102
ns
ta
36
tb
66
Reverse Recovery Stored Charge
QRR
0.150
μC
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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