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参数资料
| 型号： | MMDF6N03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 207K |
| 代理商： | MMDF6N03HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
6.0
30
Adc
Apk
Source Current — Continuous @ TA = 25°C
IS
1.7
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)
EAS
325
mJ
Thermal Resistance — Junction–to–Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 10 sec.
TL
260
°C
DEVICE MARKING
D6N03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF6N03HDR2
13
″
12 mm embossed tape
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF6N03HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
MMDF6N03HD
DUAL TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 mW
Motorola Preferred Device
D
S
G
REV 2
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