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参数资料
| 型号： | MMDF6N03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 207K |
| 代理商： | MMDF6N03HDR2 |
MMDF6N03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
20
Adc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
RDS(on)
—
28
42
35
50
m
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
—
9.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc,
Ciss
—
430
600
pF
Output Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f
1 0 MHz)
Coss
—
217
300
Transfer Capacitance
f = 1.0 MHz)
Crss
—
67.5
135
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD =15Vdc
td(on)
—
8.2
16.4
ns
Rise Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
tr
—
8.48
16.9
Turn–Off Delay Time
GS
,
ID = 1.0 Adc,
RG =60 )
td(off)
—
89.6
179
Fall Time
RG = 6.0 )
tf
—
61.1
122
Turn–On Delay Time
(VDD =15Vdc
td(on)
—
11.8
23
ns
Rise Time
(VDD = 15 Vdc,
VGS = 4.5 Vdc,
tr
—
51.3
102
Turn–Off Delay Time
GS
,
ID = 1.0 Adc,
RG =60 )
td(off)
—
47.2
94.5
Fall Time
RG = 6.0 )
tf
—
62
104
Gate Charge
(See Figure 8)
(V
15 Vd
QT
—
15.7
31.4
nC
(See Figure 8)
(VDS = 15 Vdc,
ID =5 0Adc
Q1
—
2.0
—
ID = 5.0 Adc,
VGS = 10 Vdc)
Q2
—
4.6
—
GS
)
Q3
—
3.86
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
—
0.77
0.65
1.2
—
Vdc
Reverse Recovery Time
(I
5 0 Ad
V
0 Vd
trr
—
54.5
—
ns
(IS = 5.0 Adc, VGS = 0 Vdc,
ta
—
14.8
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
39.7
—
Reverse Recovery Stored Charge
QRR
—
0.048
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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