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参数资料
| 型号： | MMDF6N03HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 207K |
| 代理商： | MMDF6N03HDR2 |
MMDF6N03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
8.0
4.0
2.0
0
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.30
0.20
0.15
0.10
0.05
0
ID, DRAIN CURRENT (AMPS)
2.0
1.0
0.050
0.045
0.040
0.035
0.030
0.025
3.0
9.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (°C)
1.2
0.8
0.6
0.4
0.2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
1000
100
1.0
0.1
15
0
I D
,DRAIN
CURRENT
(AMPS)
I
R
4.0
2.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
2.0
2.5
3.0
3.5
4.0
6.0
10
12
3.0
4.0
5.0
6.0
7.0
4.0
5.0
6.0
7.0
8.0
9.0
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
1.0
10
20
25
10
I DSS
,LEAKAGE
(nA)
1.8
,DRAIN
CURRENT
(AMPS)
D
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
0.25
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.6
1.4
1.8
VGS = 10 V
ID = 3 A
VGS = 0 V
TJ = 125°C
100
°C
25
°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 6 A
VDS ≥ 10 V
TJ = –55°C
100
°C
25
°C
TJ = 25°C
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
VGS = 2.5 V
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.7 V
3.9 V
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