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参数资料
| 型号： | MMDJ3P03BJT |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR |
| 封装： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件页数： | 3/7页 |
| 文件大小： | 204K |
| 代理商： | MMDJ3P03BJT |
MMDJ3P03BJT
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
—
—
Vdc
EmitterBase Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
—
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
—
—
20
200
μAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
—
—
10
μAdc
ON CHARACTERISTICS(1)
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
—
0.15
—
0.21
0.24
0.55
Vdc
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
—
—
1.25
Vdc
BaseEmitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
—
—
1.10
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
125
110
90
260
—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
—
100
150
pF
Input Capacitance
(VEB = 8.0 Vdc)
Cib
—
135
—
pF
CurrentGain — Bandwidth Product(2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
—
110
—
MHz
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
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