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参数资料
| 型号： | MMDJ3P03BJT |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR |
| 封装： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件页数： | 5/7页 |
| 文件大小： | 204K |
| 代理商： | MMDJ3P03BJT |
MMDJ3P03BJT
http://onsemi.com
5
100 ms
Figure 7. VBE(on) Voltage
Figure 8. Output Capacitance
Figure 9. CurrentGain Bandwidth Product
Figure 10. Active Region Safe Operating Area
10
0.1
IC, COLLECTOR CURRENT (A)
1.2
0.4
VR, REVERSE VOLTAGE (V)
10
0.1
IC, COLLECTOR CURRENT (A)
1000
10
V,
VOL
TAGE
(V)
f
0
1.0
,CURRENTGAIN
BANDWIDTH
PRODUCT
t
0.8
10
100
0.1
1000
C,
CAP
ACIT
ANCE
(pF)
10
1.0
100
0.1
VCE, COLLECTOREMITTER VOLTAGE (V)
10
0.01
0.001
I
1.0
,COLLECT
OR
CURRENT
(A)
C
VCE = 4.0 V
150°C
25°C
55 °C
Cob
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
10
1.0
0.1
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECONDARY BREAKDOWN LIMIT
5.0 ms
0.5 ms
100
Figure 11. Power Derating
T, TEMPERATURE (°C)
150
25
2.0
1.0
0
P
50
,POWER
DISSIP
ATION
(W)
D 0.5
1.5
75
100
125
TA
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
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