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参数资料
| 型号： | MMFT1N10ET1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 2/10页 |
| 文件大小： | 236K |
| 代理商： | MMFT1N10ET1 |
MMFT1N10E
10
Motorola TMOS Power MOSFET Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MMFT1N10E/D
*MMFT1N10E/D*
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PDF描述 |
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| MMFT2955ET3 | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT2955ET1 | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT2955ET1G | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMFT1N20T1 | 制造商:ON Semiconductor 功能描述: |
| MMFT2406T | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
| MMFT2406T1 | 功能描述:MOSFET N-CH 240V 700MA SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT2406T1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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