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参数资料
| 型号： | MMFT1N10ET1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件页数： | 4/10页 |
| 文件大小： | 236K |
| 代理商： | MMFT1N10ET1 |
MMFT1N10E
3
Motorola TMOS Power MOSFET Transistor Device Data
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
10
Figure 1. On Region Characteristics
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
Figure 2. Gate–Threshold Voltage Variation
With Temperature
TJ, JUNCTION TEMP (°C)
Figure 3. Transfer Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. On–Resistance versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (°C)
VDS = VGS
ID = 1.0 mA
I D
,DRAIN
CURRENT
(AMPS)
8
6
4
2
0
10
8
6
4
2
0
V
GS(TH)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
1.1
– 50
1.0
0.9
0.8
0.7
0
50
100
150
4
I D
,DRAIN
CURRENT
(AMPS)
3
2
1
0
10
8
6
4
2
0
0.5
0
0.3
0.2
0.1
0
2
4
0.4
0.5
0.4
0.3
0.1
0
16
12
10
8
6
4
0.5
– 50
0.3
0.2
0.1
0
50
100
150
0.4
0.2
14
7 V
6 V
VGS = 4 V
5 V
9 V
8 V
VDS = 10 V
100
°C
TJ = – 55°C
25
°C
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
ID = 1 A
VGS = 10 V
ID = 1 A
10 V
VGS = 10 V
1.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMFT1N20T1 | 制造商:ON Semiconductor 功能描述: |
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| MMFT2406T1 | 功能描述:MOSFET N-CH 240V 700MA SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT2406T1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
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