参数资料
型号: MMFT2955ET1G
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
封装: LEAD FREE, CASE 318E-04, 4 PIN
文件页数: 1/6页
文件大小: 203K
代理商: MMFT2955ET1G
Publication Order Number:
MMFT2955E/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
MMFT2955E
Preferred Device
Power MOSFET
1 Amp, 60 Volts
PChannel SOT223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This new energy efficient device
also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT223 package which is designed for medium power
surface mount applications.
Features
Silicon Gate for Fast Switching Speeds
The SOT223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
PbFree Package is Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDS
60
Vdc
GatetoSource Voltage Continuous
VGS
±15
Drain Current Continuous
Drain Current Pulsed
ID
IDM
1.2
4.8
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
(Note 1)
0.8
6.4
W
mW/°C
Operating and Storage Temperature Range
TJ, Tstg 65 to 150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, Peak
IL= 1.2 A, L = 0.2 mH, RG = 25 W)
EAS
108
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoAmbient
(surface mounted)
RqJA
156
°C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
TL
260
10
°C
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Power rating when mounted on FR4 glass epoxy printed circuit board using
recommended footprint.
1 AMPERE, 60 VOLTS
RDS(on) = 300 mW
Device
Package
Shipping
ORDERING INFORMATION
MMFT2955ET1
SOT223
1000 Tape & Reel
MMFT2955ET3
SOT223
4000 Tape & Reel
D
S
G
PChannel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
MMFT2955ET1G
SOT223
(PbFree)
1000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
4
TO261AA
CASE 318E
STYLE 3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= PbFree Package
2955E = Device Code
MARKING DIAGRAM AND
PIN ASSIGNMENT
3
Source
2
Drain
1
Gate
4 Drain
(Note: Microdot may be in either location)
AYW
2955E G
G
相关PDF资料
PDF描述
MMFT2N25EG 2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3055ET1 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3055ET3 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMFT3055ET1 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMFT3055ELT3 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
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