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参数资料
| 型号： | MMFT2955ET1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | LEAD FREE, CASE 318E-04, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 203K |
| 代理商： | MMFT2955ET1G |
MMFT2955E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage, (VGS = 0, ID = 250 mA)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current,
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
50
mAdc
GateBody Leakage Current,
(VGS = 15 V, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
VGS(th)
2.0
4.5
Vdc
Static DraintoSource OnResistance, (VGS = 10 V, ID = 0.6 A)
RDS(on)
0.3
W
DraintoSource OnVoltage, (VGS = 10 V, ID = 1.2 A)
VDS(on)
0.48
Vdc
Forward Transconductance, (VDS = 15 V, ID = 0.6 A)
gFS
7.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 V, VGS = 0, f = 1 MHz)
Ciss
460
pF
Output Capacitance
Coss
210
Reverse Transfer Capacitance
Crss
84
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 25 V, ID = 1.6 A
VGS = 10 V, RG = 50 W, RGS = 25 W)
td(on)
18
ns
Rise Time
tr
29
TurnOff Delay Time
td(off)
44
Fall Time
tf
32
Total Gate Charge
(VDS = 48 V, ID = 1.2 A,
VGS = 10 Vdc)
See Figures 15 and 16
Qg
18
nC
GateSource Charge
Qgs
2.8
GateDrain Charge
Qgd
7.5
SOURCE DRAIN DIODE CHARACTERISTICS (Note 3)
Forward OnVoltage
IS = 1.2 A, VGS = 0
VSD
1.0
Vdc
Forward TurnOn Time
IS = 1.2 A, VGS = 0,
dlS/dt = 400 A/ms, VR = 30 V
ton
Limited by stray inductance
Reverse Recovery Time
trr
90
ns
2. Switching characteristics are independent of operating junction temperature.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On Region Characteristics
Figure 2. GateThreshold Voltage Variation
With Temperature
10
8
6
4
2
0
10
8
6
4
2
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
20 V
15 V
10 V
8 V
7 V
6 V
5 V
VGS = 4 V
V
GS(th)
,GA
TE
THRESHOLD
VOL
TS
(NORMALIZED)
1.1
50
TJ, JUNCTION TEMPERATURE (°C)
0.7
0.8
0.9
1
0
50
100
150
VDS = VGS
ID = 1 mA
1.2
TJ = 25°C
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