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参数资料
| 型号： | MMFT2406T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 37K |
| 代理商： | MMFT2406T1 |
MMFT2406T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0,
I
D
= 100 A)
V
(BR)DSS
240
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 120 V, V
GS
= 0)
I
DSS
10
Adc
GateBody Leakage Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.8
2.0
Vdc
Static DraintoSource OnResistance
(V
GS
= 2.5 Vdc, I
D
= 0.1 Adc)
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
R
DS(on)
10
6.0
DraintoSource OnVoltage
(V
GS
= 10 V, I
D
= 0.5 A)
V
DS(on)
3.0
Vdc
Forward Transconductance
(V
DS
= 6.0 V, I
D
= 0.5 A)
g
FS
300
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
125
pF
Output Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
oss
50
Transfer Capacitance
C
rss
20
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
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PDF描述 |
|---|---|
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| MMFT2406T3 | Power MOSFET |
| MMFT2406T3G | Power MOSFET |
| MMG3002NT1 | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2406T1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| MMFT2406T3 | 制造商:Rochester Electronics LLC 功能描述: |
| MMFT2406T3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| MMFT2955E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
| MMFT2955ET1 | 制造商:ON Semiconductor 功能描述:MOSFET P SOT-223 |
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