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参数资料
| 型号： | MMFT2N02ELT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 代理商： | MMFT2N02ELT1 |
Publication Order Number:
MMFT2N02EL/D
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
NChannel SOT223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dcdc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT223 package which is
designed for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic Level
ICs, VGS(th) = 2 Volts Max
The SOT223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDS
20
Vdc
GatetoSource Voltage Continuous
VGS
± 15
Drain Current Continuous
Drain Current Pulsed
ID
IDM
1.6
6.4
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
(Note 1.)
0.8
6.4
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
65 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 10 V, VGS = 5 V, Peak
IL= 2 A, L = 0.2 mH, RG = 25 Ω)
EAS
66
mJ
THERMAL CHARACTERISTICS
Thermal Resistance
JunctiontoAmbient (surface mounted)
RθJA
156
°C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
1. Power rating when mounted on FR4 glass epoxy printed circuit board using
recommended footprint.
2 AMPERES
20 VOLTS
RDS(on) = 150 mW
D
G
S
1
2
3
4
NChannel
Device
Package
Shipping
ORDERING INFORMATION
MMFT2N02ELT1
SOT223
1000 Tape & Reel
TO261AA
CASE 318E
STYLE 3
http://onsemi.com
LWW
MARKING
DIAGRAM
2N02L
L
= Location Code
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
4
Gate
Drain
Source
Drain
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT2N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| MMFT3055ET1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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