参数资料
型号: MMFT2N02ELT1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
封装: CASE 318E-04, 4 PIN
文件页数: 9/10页
文件大小: 0K
代理商: MMFT2N02ELT1
MMFT2N02EL
http://onsemi.com
8
0.8 Watts
1.25 Watts*
1.5 Watts
R
,
Thermal
Resistance,
Junction
to
Ambient
(C/W)
θ JA
°
A, Area (square inches)
0.0
0.2
0.4
0.6
0.8
1.0
160
140
120
100
80
Figure 17. Thermal Resistance versus Drain Pad
Area for the SOT223 Package (Typical)
Board Material = 0.0625
G10/FR4, 2 oz Copper
TA = 25°C
*Mounted on the DPAK footprint
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad
t. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
相关PDF资料
PDF描述
MMFT2N02ELT1 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3166T3 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3166T1 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFTN138 220 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
MMG05N60DT1 0.5 A, 600 V, N-CHANNEL IGBT, TO-261
相关代理商/技术参数
参数描述
MMFT2N25E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS
MMFT2N25ET3 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel
MMFT3055E 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS
MMFT3055EL 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
MMFT3055ET1 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel