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参数资料
| 型号： | MMFT2N02ELT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 代理商： | MMFT2N02ELT1 |
MMFT2N02EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage, (VGS = 0, ID = 250 μA)
V(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0)
IDSS
10
μAdc
GateBody Leakage Current, (VGS = 15 V, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
VGS(th)
1
2
Vdc
Static DraintoSource OnResistance, (VGS = 5 V, ID = 0.8 A)
RDS(on)
0.15
Ohms
DraintoSource OnVoltage, (VGS = 5 V, ID = 1.6 A)
VDS(on)
0.32
Vdc
Forward Transconductance, (VDS = 10 V, ID = 0.8 A)
gFS
2.6
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 V,
VGS = 0,
f = 1 MHz)
Ciss
580
pF
Output Capacitance
Coss
430
Reverse Transfer Capacitance
Crss
250
SWITCHING CHARACTERISTICS
TurnOn Delay Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
td(on)
16
ns
Rise Time
tr
73
TurnOff Delay Time
td(off)
77
Fall Time
tf
107
Total Gate Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
See Figures 15 and 16
Qg
20
nC
GateSource Charge
Qgs
1.7
GateDrain Charge
Qgd
6
SOURCE DRAIN DIODE CHARACTERISTICS (Note 1)
Forward OnVoltage
IS = 1.6 A, VGS = 0
VSD
0.9
Vdc
Forward TurnOn Time
IS = 1.6 A, VGS = 0,
dlS/dt = 400 A/μs,
VR = 16 V
ton
Limited by stray inductance
Reverse Recovery Time
trr
55
ns
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%
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