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参数资料
| 型号： | MMFT3055VLT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 219K |
| 代理商： | MMFT3055VLT1G |
MMFT3055VL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
65
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
3.7
2.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 5.0 Vdc, ID = 0.75 Adc)
RDS(on)
0.125
0.14
Ohm
DraintoSource OnVoltage
(VGS = 5.0 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.75 Adc, TJ = 150°C)
VDS(on)
0.25
0.24
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.5 Adc)
gFS
1.0
3.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
350
490
pF
Output Capacitance
Coss
110
150
Transfer Capacitance
Crss
29
60
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc,
RG = 9.1 Ω)
td(on)
9.5
20
ns
Rise Time
tr
18
40
TurnOff Delay Time
td(off)
35
70
Fall Time
tf
22
40
Gate Charge
(VDS = 48 Vdc, ID = 1.5 Adc,
VGS = 5.0 Vdc)
QT
9.0
10
nC
Q1
1.0
Q2
4.0
Q3
3.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 1.5 Adc, VGS = 0 Vdc)
(IS = 1.5 Adc, VGS = 0 Vdc,
TJ = 150°C)
VSD
0.82
0.68
1.2
Vdc
Reverse Recovery Time
(IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
41
ns
ta
29
tb
12
Reverse Recovery Stored
Charge
QRR
0.066
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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