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参数资料
| 型号： | MMFT3055VLT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 219K |
| 代理商： | MMFT3055VLT1G |
MMFT3055VL
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
0
1
2
345
0
1.5
2.5
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
01
2
3
4
0
1.5
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1
2.5
4
0
0.05
0.1
0.15
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
1
3.5
4
0
0.025
0.15
0.2
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
020
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 5 V
ID = 0.75 A
3 V
2 V
2.5 V
0.5
1
2
0.5
1.5
2.5
3.5
0.5
2
3.5
VGS = 5 V
TJ = 100°C
25°C
55°C
2
3.5
0.5
2
2.5
10
30
40
0.025
0.075
0.125
0.05
0.175
0.075
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
67
8
9
10
2.5
1
3
1.5
0.175
0.2
0.125
1.5
3
0.1
0.4
0.2
0
1.8
2.0
100°C
3
3.5
4
6 V
4.5 V
3.5 V
4.5
5
5.5
0.225
0.25
6
6.5
0.225
0.25
1
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