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参数资料
| 型号： | MMFT3055VLT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 219K |
| 代理商： | MMFT3055VLT1G |
MMFT3055VL
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
50
75
100
125
VGS = 15 V
SINGLE PULSE
TC = 25°C
ID = 1.5 A
1
150
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.1
10
0.01
0
30
10
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
20
175
40
50
60
dc
100 ms
500 ms
1 s
10 ms
t, TIME (s)
Rthja(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.1
0.01
0.001
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.0001
1
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相关代理商/技术参数 |
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| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
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