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参数资料
| 型号： | MMSTA42-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 72K |
| 代理商： | MMSTA42-13 |
DS30175 Rev. 6 - 2
1 of 3
MMSTA42
www.diodes.com
Diodes Incorporated
MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMSTA92)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 2)
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
M
J
L
E
D
B C
H
K
G
B
E
C
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Marking (See Page 2): K3M
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Characteristic
Symbol
MMSTA42
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current (Note 1)
IC
200
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
°
8
°
All Dimensions in mm
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SPICE MODEL: MMSTA42
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相关代理商/技术参数 |
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| MMSTA42-7 | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-7-F | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-T | 功能描述:两极晶体管 - BJT 200mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-TP | 功能描述:两极晶体管 - BJT 200mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA55 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:PNP Silicon Epitaxial Planar Transistor |
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