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参数资料
| 型号： | MMSTA42-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 72K |
| 代理商： | MMSTA42-13 |
DS30175 Rev. 6 - 2
2 of 3
MMSTA42
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
300
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
300
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 100
mA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 200V, IE = 0
Collector Cutoff Current
IEBO
100
nA
VCE = 6.0V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
25
40
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 20mA, IB = 2.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.9
V
IC = 20mA, IB = 2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
50
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ordering Information (Note 4)
Device
Packaging
Shipping
MMSTA42-7
SOT-323
3000/Tape & Reel
Notes:
3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMSTA42-7-F.
Marking Information
K3M
YM
K3M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
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相关代理商/技术参数 |
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|---|---|
| MMSTA42-7 | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-7-F | 功能描述:两极晶体管 - BJT 300V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-T | 功能描述:两极晶体管 - BJT 200mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA42-TP | 功能描述:两极晶体管 - BJT 200mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMSTA55 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:PNP Silicon Epitaxial Planar Transistor |
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