参数资料
型号: MPC8544DVTANG
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 400 MHz, MICROPROCESSOR, PBGA783
封装: 29 X 29 MM, 1 MM PITCH, LEAD FREE, PLASTIC, FC-PBGA-783
文件页数: 12/128页
文件大小: 1411K
代理商: MPC8544DVTANG
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 1
Freescale Semiconductor
109
Thermal
Dow-Corning Corporation
800-248-2481
Corporate Center
P.O.Box 999
Midland, MI 48686-0997
Internet: www.dow.com
Shin-Etsu MicroSi, Inc.
888-642-7674
10028 S. 51st St.
Phoenix, AZ 85044
Internet: www.microsi.com
The Bergquist Company
800-347-4572
18930 West 78th St.
Chanhassen, MN 55317
Internet: www.bergquistcompany.com
Thermagon Inc.
888-246-9050
4707 Detroit Ave.
Cleveland, OH 44102
Internet: www.thermagon.com
20.3.3
Heat Sink Selection Examples
The following section provides a heat sink selection example using one of the commercially available heat
sinks.
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
TJ = TI + TR + (θJC + θINT + θSA) × PD
where
TJ is the die-junction temperature
TI is the inlet cabinet ambient temperature
TR is the air temperature rise within the computer cabinet
θJC is the junction-to-case thermal resistance
θINT is the adhesive or interface material thermal resistance
θSA is the heat sink base-to-ambient thermal resistance
PD is the power dissipated by the device
During operation the die-junction temperatures (TJ) should be maintained within the range specified in
Table 2. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (TI)
may range from 30
°C to 40°C. The air temperature rise within a cabinet (TR) may be in the range of 5°C
to 10
°C. The thermal resistance of the thermal interface material (θ
INT) may be about 1°C/W. Assuming
a TI of 30°C, a TR of 5°C, a FC-PBGA package θJC = 0.1, and a power consumption (PD) of 5, the
following expression for TJ is obtained:
Die-junction temperature: TJ = 30°C + 5°C + (0.1°C/W + 1.0°C/W + θSA) × PD
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