参数资料
型号: MPS3906
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: General Purpose Transistor(PNP Silicon)
中文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: CASE 29-04, TO-226AA, 3 PIN
文件页数: 2/8页
文件大小: 433K
代理商: MPS3906
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
60
80
100
60
30
300
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
–0.25
–0.4
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(sat)
–0.65
–0.85
–0.95
Vdc
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 V, f = 100 MHz)
fT
250
MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.5
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
10
pF
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hie
2.0
12
k
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hre
1.0
10
X 10–4
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hfe
100
400
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hoe
3.0
60
mhos
Noise Figure
(IC = –100 Adc, VCE = –5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
NF
4.0
dB
Delay Time
IC = –10 mAdc, IB1 = 1.0 mAdc)
td
tr
35
ns
Rise Time
(VCC = –3.0 Vdc, VBE(off) = +0.5 Vdc,
50
ns
Storage Time
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
ts
tf
600
ns
Fall Time
90
ns
1. Pulse Test: Pulse Width = 300 s; Duty Cycle = 2.0%.
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