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参数资料
| 型号： | MPS3906 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | General Purpose Transistor(PNP Silicon) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 433K |
| 代理商： | MPS3906 |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.003
h
F
TJ = 125
°
C
–55
°
C
25
°
C
VCE = 1.0 V
VCE = 10 V
Figure 7. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 8. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V
1.0
2.0
5.0
10
20
50
1.6
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*VC for VCE(sat)
VB for VBE
0.1
0.2
0.5
Figure 9. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
0.002
V
TA = 25
°
C
IC = 1.0 mA
10 mA
100 mA
Figure 10. Temperature Coefficients
50 mA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I
TA = 25
°
C
PULSE WIDTH = 300
μ
s
DUTY CYCLE
≤
2.0%
IB = 400
μ
A
350
μ
A
300
μ
A
250
μ
A
200
μ
A
*APPLIES for IC/IB
≤
hFE/2
25
°
C to 125
°
C
–55
°
C to 25
°
C
25
°
C to 125
°
C
–55
°
C to 25
°
C
40
60
0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
5.0
10
15
20
25
30
35
40
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
0.8
0
1.6
0.8
1.0
2.0
5.0
10
20
50
100
0.1
0.2
0.5
200
100
80
V
θ
°
150
μ
A
100
μ
A
50
μ
A
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