参数资料
| 型号： | MR2A16ACMA35 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 35NS 48BGA |
| 标准包装： | 348 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (256K x 16) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 托盘 |
| 其它名称： | 819-1020 |
MR2A16A
FEATURES
? Fast 35 ns Read/Write cycle
? SRAM compatible timing, uses existing SRAM control -
lers without redesign
? Unlimited Read & Write endurance
? Data non-volatile for >20 years at temperature
? One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
? Replaces battery-backed SRAM solutions with MRAM
to improve reliability
? 3.3 volt power supply
? Automatic data protection on power loss
? Commercial, Industrial, Extended temperatures
? AEC-Q100 Grade 1 option
? All products meet MSL-3 moisture sensitivity level
? RoHS-compliant SRAM TSOP2 and BGA Packages
INTRODUCTION
256K x 16 MRAM Memory
44-pin TSOP2
48-ball BGA
RoHS
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga -
nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati -
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and re -
trieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod -
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright ? Everspin Technologies 2013
1
MR2A16A Rev. 11, 10/2013
相关PDF资料 |
PDF描述 |
|---|---|
| MR2A08ACMA35 | IC MRAM 4MBIT 35NS 48BGA |
| MR2A08AYS35 | IC MRAM 4MBIT 35NS 44TSOP |
| GCB90DHBN | CONN EDGECARD 180PS R/A .050 SLD |
| GCB90DHBD | CONN EDGECARD 180PS R/A .050 SLD |
| 10326-E2W0-008 | JUNCTION SHELL 26POS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16ACYS35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。