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参数资料
| 型号： | MR4A08BCYS35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 10/14页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 16MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 16M（2M x 8） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
Timing Specifications
Table 3.5 Write Cycle Timing 2 (E Controlled) 1
MR4A08B
Parameter
Write cycle time 2
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Enable to end of write (G high)
Enable to end of write (G low) 3
Data valid to end of write
Data hold time
Write recovery time
Symbol
t AVAV
t AVEL
t AVEH
t AVEH
t ELEH
t ELWH
t ELEH
t ELWH
t DVEH
t EHDX
t EHAX
Min
35
0
18
20
15
15
10
0
12
Max
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
2
3
All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and decoupled and bus
contention conditions must be minimized or eliminated during read and write cycles. If G goes low at the same time or after
W goes low, the output will remain in a high impedance state. After W, E or UB/ LB has been brought high, the signal must
remain in steady-state high for a minimum of 2 ns. The minimum time between E being asserted low in one cycle to E being
asserted low in a subsequent cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
If E goes low at the same time or after W goes low, the output will remain in a high-impedance state. If E goes high at the
same time or before W goes high, the output will remain in a high-impedance state.
Figure 3.5 Write Cycle Timing 2 (E Controlled)
t AVAV
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
t AVEL
t AVEH
t ELEH
t ELWH
t EHAX
t DVEH
t EHDX
D (DATA IN)
Q (DATA OUT)
Hi-Z
Data Valid
Copyright ? Everspin Technologies 2013
10
MR4A08B Rev. 6 9/2013
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相关代理商/技术参数 |
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| MR4A08BMA35 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMA35R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35 | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35R | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BYS35 | 功能描述:NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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