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| 型号： | MR4A08BCYS35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 14/14页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 16MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 16M（2M x 8） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
MR4A08B
6. REVISION HISTORY
Revision
Date
Description of Change
1
May 29, 2009 Establish Speed and Power Specifications
2
3
July 27, 2009
May 5, 2010
Increase BGA Package to 11 mm x 11 mm
Changed speed marking and timing specs to 35 ns part. Changed BGA package to
10 mm x 10mm
4
Aug 10, 2011 Max. magnetic field during write (H max_write ) increased to 8000 A/m.
5
6
March 1,
2012
September 20,
2013
Added preliminary information on AEC-Q100 Grade 1.
Replaced missing V OH specification line in Table 2.3.
How to Reach Us:
Home Page:
www.everspin.com
E-Mail:
support@everspin.com
orders@everspin.com
sales@everspin.com
USA/Canada/South and Central America
Everspin Technologies
1347 N. Alma School Road, Suite 220
Chandler, Arizona 85224
+1-877-347-MRAM (6726)
+1-480-347-1111
Europe, Middle East and Africa
support.europe@everspin.com
Japan
support.japan@everspin.com
Asia Pacific
support.asia@everspin.com
Information in this document is provided solely to enable system and software imple-
menters to use Everspin Technologies products. There are no express or implied licenses
granted hereunder to design or fabricate any integrated circuit or circuits based on the
information in this document. Everspin Technologies reserves the right to make changes
without further notice to any products herein. Everspin makes no warranty, representa-
tion or guarantee regarding the suitability of its products for any particular purpose,
nor does Everspin Technologies assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including
without limitation consequential or incidental damages. “Typical” parameters, which
may be provided in Everspin Technologies data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters including “Typicals” must be validated for each customer application by cus-
tomer’s technical experts. Everspin Technologies does not convey any license under its
patent rights nor the rights of others. Everspin Technologies products are not designed,
intended, or authorized for use as components in systems intended for surgical implant
into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Everspin Technologies product could create a situ-
ation where personal injury or death may occur. Should Buyer purchase or use Everspin
Technologies products for any such unintended or unauthorized application, Buyer shall
indemnify and hold Everspin Technologies and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim
Document Control Number: alleges that Everspin Technologies was negligent regarding the design or manufacture
EST00356_MR4A08B_Datasheet_Rev6 092013 of the part. Everspin? and the Everspin logo are trademarks of Everspin Technologies,
Inc. All other product or service names are the property of their respective owners.
Copyright ? Everspin Technologies 2013
14
MR4A08B Rev. 6 9/2013
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| MR4A08BMA35 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMA35R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35 | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35R | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BYS35 | 功能描述:NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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