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参数资料
| 型号： | MR4A08BCYS35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 5/14页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 16MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 16M（2M x 8） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
Electrical Specifications
Table 2.2 Operating Conditions
MR4A08B
Parameter
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Temperature under bias
MR4A08B (Commercial)
MR4A08BC (Industrial)
MR4A08BM (AEC-Q100 Grade 1) iv
Symbol
V DD
V WI
V IH
V IL
T A
Min
3.0 i
2.5
2.2
-0.5 iii
0
-40
-40
Typical
3.3
2.7
-
-
Max
3.6
3.0 i
V DD + 0.3 ii
0.8
70
85
125
Unit
V
V
V
V
°C
i
ii
iii
iv
There is a 2 ms startup time once V DD exceeds V DD, (min). See Power Up and Power Down Sequencing below.
V IH (max) = V DD + 0.3 V DC ; V IH (max) = V DD + 2.0 V AC (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
V IL (min) = -0.5 V DC ; V IL (min) = -2.0 V AC (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
AEC-Q100 Grade 1 temperature profile assumes 10% duty cycle at maximum temperature (2-years out of 20-year life)
Power Up and Power Down Sequencing
MRAM is protected from write operations whenever V DD is less than V WI . As soon as V DD exceeds V DD (min),
there is a startup time of 2 ms before read or write operations can start. This time allows memory power
supplies to stabilize.
The E and W control signals should track V DD on power up to V DD - 0.2 V or V IH (whichever is lower) and re-
main high for the startup time. In most systems, this means that these signals should be pulled up with a
resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E and
W should hold the signals high with a power-on reset signal for longer than the startup time.
During power loss or brownout where V DD goes below V WI , writes are protected and a startup time must be
observed when power returns above V DD (min).
Figure 2.1 Power Up and Power Down Diagram
V WIDD
V DD
STARTUP
2 ms
BROWNOUT or POWER LOSS
2 ms
RECOVER
READ/WRITE
INHIBITED
NORMAL
OPERATION
READ/WRITE
INHIBITED
NORMAL
OPERATION
V IH
V IH
E
W
Copyright ? Everspin Technologies 2013
5
MR4A08B Rev. 6 9/2013
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| MR4A08BMA35 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMA35R | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35 | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BMYS35R | 功能描述:NVRAM 16MB 3.3V 35ns pre-qual sample MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR4A08BYS35 | 功能描述:NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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