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参数资料
| 型号： | MR4A08BYS35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 13/14页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 16MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 16M（2M x 8） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
Mechanical Drawings
BOTTOM VIEW
(DATUM B)
Figure 5.2 FBGA
MR4A08B
TOP VIEW
(DATUM A)
6 5 4 3 2 1
A
B
PIN A1
INDEX
PIN A1
INDEX
C
D
E
F
G
H
SEATING PLANE
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION.
THE PRE-REFLOW DIAMETER IS
?
0.35mm
Ref
Min
Nominal
Max
A
A1
b
D
E
D1
E1
DE
SE
1.19
0.22
0.31
1.27
0.27
0.36
10.00 BSC
10.00 BSC
5.25 BSC
3.75 BSC
0.375 BSC
0.375 BSC
1.35
0.32
0.41
1.
2.
3.
4.
5.
6.
Print Version Not To Scale
Dimensions in Millimeters.
The ‘e’ represents the basic solder ball grid pitch.
‘b’ is measurable at the maximum solder ball diameter
in a plane parallel to datum C.
Dimension ‘ccc’ is measured parallel to primary datum
C.
Primary datum C (seating plane) is defined by the
crowns
of the solder balls.
Package dimensions refer to JEDEC MO-205 Rev. G.
e
Ref
aaa
bbb
ddd
eee
fff
0.75 BSC
Tolerance of, from and position
0.10
0.10
0.12
0.15
0.08
Copyright ? Everspin Technologies 2013
13
MR4A08B Rev. 6 9/2013
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相关代理商/技术参数 |
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|---|---|
| MR4A16ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR4A16ACYS35 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR4A16AVTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR4A16AVYS35 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR4A16AYS35 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
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