参数资料
型号: MR4A08BYS35R
厂商: Everspin Technologies Inc
文件页数: 4/14页
文件大小: 0K
描述: IC MRAM 16MBIT 35NS 44TSOP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: MRAM(磁阻 RAM)
存储容量: 16M(2M x 8)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 带卷 (TR)
MR4A08B
2. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any
voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken
to avoid application of any magnetic field more intense than the maximum field intensity specified
in the maximum ratings.
Table 2.1 Absolute Maximum Ratings 1
Parameter
Supply voltage 2
Voltage on any pin 2
Output current per pin
Package power dissipation 3
Temperature under bias
MR4A08B (Commercial)
MR4A08BC (Industrial)
MR4A08BM (AEC-Q100 Grade 1)
Storage Temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR4A08B (All Temperatures)
Maximum magnetic field during read or standby
Symbol
V DD
V IN
I OUT
P D
T BIAS
T stg
T Lead
H max_write
H max_read
Value
-0.5 to 4.0
-0.5 to V DD +
0.5
±20
0.600
-10 to 85
-45 to 95
-45 to 130
-55 to 150
260
8000
8000
Unit
V
V
mA
W
°C
°C
°C
A/m
A/m
1
2
3
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional opera-
tion should be restricted to recommended operating conditions. Exposure to excessive voltages or
magnetic fields could affect device reliability.
All voltages are referenced to V SS .
Power dissipation capability depends on package characteristics and use environment.
Copyright ? Everspin Technologies 2013
4
MR4A08B Rev. 6 9/2013
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