参数资料
型号: MR4A08BYS35R
厂商: Everspin Technologies Inc
文件页数: 7/14页
文件大小: 0K
描述: IC MRAM 16MBIT 35NS 44TSOP
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: MRAM(磁阻 RAM)
存储容量: 16M(2M x 8)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 带卷 (TR)
MR4A08B
3. TIMING SPECIFICATIONS
Table 3.1 Capacitance 1
Parameter
Address input capacitance
Control input capacitance
Input/Output capacitance
Symbol
C In
C In
C I/O
Typical
-
-
-
Max
6
6
8
Unit
pF
pF
pF
1
f = 1.0 MHz, dV = 3.0 V, T A = 25 °C, periodically sampled rather than 100% tested.
Table 3.2 AC Measurement Conditions
Parameter
Logic input timing measurement reference level
Logic output timing measurement reference level
Logic input pulse levels
Input rise/fall time
Value
1.5
1.5
0 or 3.0
2
Unit
V
V
V
ns
Output load for low and high impedance parameters
Output load for all other timing parameters
Figure 3.1 Output Load Test Low and High
See Figure 3.1
See Figure 3.2
Output
Z D = 50
R L = 50
V L = 1.5 V
Figure 3.2 Output Load Test All Others
3.3 V
590
Output
435
5 pF
Copyright ? Everspin Technologies 2013
7
MR4A08B Rev. 6 9/2013
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