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参数资料
| 型号： | MRF1000MB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 332A-03, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 104K |
| 代理商： | MRF1000MB |
The RF Line
Microwave Pulse
Power Transistors
Designed for Class A and AB common emitter amplifier applications in the
low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Output Power = 0.2 Watt
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
50
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25
°C
PD
7.0
40
Watts
mW/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
RθJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
20
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
50
—
Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
V(BR)CBO
50
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
3.5
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
—
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
10
—
100
—
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
MRF1000MB
0.7 W, 960–1215 MHz
CLASS A/AB
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 2
Order this document
by MRF1000MB/D
SEMICONDUCTOR TECHNICAL DATA
1
Replaces MRF1000MA/D
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相关代理商/技术参数 |
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| MRF1000MB-MOT | 制造商:M/A-COM Technology Solutions 功能描述:MOT BIPOLAR *MOT DIE PRODUCT ONLY* - Bulk |
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| MRF1002 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF1002MA | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
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