参数资料
型号: MRF1000MB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: CASE 332A-03, 4 PIN
文件页数: 2/4页
文件大小: 104K
代理商: MRF1000MB
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
2.0
5.0
pF
FUNCTIONAL TESTS
Common–Emitter Power Gain — Class A
(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW)
GPE
10
12
dB
Common–Emitter Power Gain — Class AB
(VCE = 18 Vdc, ICQ = 10 mAdc, f = 1090 MHz, Pout = 0.7 W)
GPE
10.7
dB
Load Mismatch — Class A
(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2, C3, C7, C8, C10 — 220 pF ATC 100 mil
C4, C9 — 4.7
F 50 V Tantalum
C5, C6 — 0.8–8.0 pF Johanson #7290
Z1–Z10 — Distributed Microstrip Elements
Z1–Z10 — See Figure 8
Board Material — 0.031
″ Thick Teflon–Fiberglass
Board Material —
εr = 2.56
Class AB Bias Control Circuit
18 V Output ICQ 10 mA Nominal
Class A Constant Current Bias Control Circuit
IC = 100 mA, VCE = 18 V
BASE BIAS INPUT
B
RF
INPUT
RF
OUTPUT
C1
Z10
C
COLLECTOR BIAS INPUT
Z1
Z5
C5
DUT
C6
Z8
C10
Z9
Z7
Z6
Z3
Z2
C2
C3
C4
C7
C8
C9
330
1/2 W
10
1/2 W
10 F
50 V
0.1 F
50 V
0.1 F
50 V
+18 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
TO POINT B
R2
11 k
1/2 W
R5
18 k
1/2 W
100
2 W
10 F
50 V
0.1 F
50 V
1 k
1/2 W
2.2 k
1/2 W
0.1 F
50 V
0.1 F
50 V
2N3906
Q1
+28 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
TO POINT B
Z4
C4
R1
C1
C2
C3
R4
R3
2
Replaces MRF1000MA/D
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