参数资料
型号: MRF1000MB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: CASE 332A-03, 4 PIN
文件页数: 3/4页
文件大小: 104K
代理商: MRF1000MB
f
S11
S21
S12
S22
f
(MHz)
|S11|
∠ φ
|S21|
∠ φ
|S12|
∠ φ
|S22|
∠ φ
950
1000
1050
1100
1150
1200
1250
0.77
0.78
0.77
0.78
166
165
163
162
161
159
158
2.42
2.36
2.31
2.20
2.12
40
38
33
28
23
19
12
0.016
0.015
0.016
42
48
46
47
42
0.48
0.50
0.51
0.54
0.57
0.59
0.61
–87
–90
–94
–97
–100
–103
–106
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. DC Safe Operating Area
Figure 5. Power Gain versus Frequency
Figure 6. Common–Emitter S–Parameters and Series Equivalent Input/Output Impedances
S–PARAMETERS — VCE = 18 Vdc, IC = 100 mAdc, Class A
f
MHz
Zin
Ohms
ZOL*
Ohms
960
1090
1215
3.0 + j9.0
3.2 + j10
2.8 + j12
16 – j40
8.5 – j31
7.0 – j26
SERIES EQUIVALENT IMPEDANCES
Pout = 0.5 W, VCE = 18 Vdc,
ICQ = 10 mAdc, Class AB
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage, and frequency.
P
,OUTPUT
POWER
(W
ATTS)
out
0.8
1
0.6
0.4
0.2
0
100
80
60
40
20
0
Pin, INPUT POWER (mW)
f = 1090 MHz
CLASS A
IC = 100 mA
VCE = 18 V
CLASS AB
ICQ = 10 mA
VCE = 18 V
P
,OUTPUT
POWER
(W
ATTS)
out
0.8
1
0.6
0.4
0.2
0
960
f, FREQUENCY (MHz)
1090
1215
CLASS A
Pin = 20 mW
IC = 100 mA
VCE = 18 V
I C
,COLLECT
OR
CURRENT
(AMP)
1
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.05
0.02
0.01
2
5
10
20
50
100
CLASS A BIAS POINT
G
PE
,POWER
GAIN
(dB)
14
960
f, FREQUENCY (MHz)
1090
1215
13
12
11
10
CLASS A
Pout = 200 mW
IC = 100 mA
VCE = 18 V
CLASS AB
Pout = 500 mW
ICQ = 10 mA
VCE = 18 V
25
50
150
250 500
10
+j50
+j100
+j150
+j250
+j500
-j500
-j250
-j150
-j100
-j50
-j25
-j10
0
+j10
+j25
Zin
1215
100
960
1090
1250
1100
950
S11
950
S22
1100
1250
960
1090
1215
ZOL*
COORDINATES IN OHMS
CLASS A
Pin = 60 mW
ICQ = 10 mA
VCE = 18 V
3
Replaces MRF1000MA/D
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