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| 型号： | MRF19125R5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 391K |
| 描述： | IC MOSFET RF N-CHAN NI-880 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 24V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.3A |
| 功率 - 输出： | 24W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880 |
| 供应商设备封装： | NI-880 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF19125R3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 3 Adc)
gfs
?
9
?
S
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3 Adc)
VDS(on)
?
0.185
0.21
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Crss
?
5.4
?
pF
Functional Tests
(In Freescale Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
Gps
12
13.5
?
dB
Drain Efficiency
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
η
19
22
?
%
Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz; IM3 measured over 1.2288 MHz Bandwidth at
f1 -2.5 MHz and f2 +2.5 MHz)
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz; ACPR measured over 30 kHz Bandwidth at
f1 -885 MHz and f2 +885 MHz)
ACPR
?
-51
-47
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
IRL
?
-13
-9
dB
1. Part is internally matched both on input and output.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF19125S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF19125SR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1946 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF1946A | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF1A(AMMO) | 制造商:Bel Fuse 功能描述:FUSE |
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